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High-Power PIN Diode Switches Using GaN Semiconductor Technology

Gallium Nitride (GaN) semiconductors have been a focus of development and innovation in the RF/microwave industry due to the inherent strengths of GaN technology for high power and broadband applications. Compared to Silicon (Si), GaN semiconductors benefit from the material’s wide, direct bandgap (WBG) structure, high electron mobility, and high critical field. This enables GaN devices to be...

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The Present and Future of GaN

Gallium nitride (GaN) semiconductor technology has been in development for decades. It has also been hyped for many industries as a powerhouse semiconductor technology due to several intrinsic traits of the material. Though not all of the hype has come to fruition, GaN devices such as an RF Power Amplifier or an RF Switch have become widely used in a variety of high power and other applications....

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